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dc.contributor.authorMartín-Guerrero, Teresa María 
dc.contributor.authorSantarelli, Alberto
dc.contributor.authorGibiino, Gian Piero
dc.contributor.authorTraverso, Pier Andrea
dc.contributor.authorCamacho-Peñalosa, Carlos 
dc.contributor.authorFilicori, Fabio
dc.date.accessioned2024-02-02T10:12:41Z
dc.date.available2024-02-02T10:12:41Z
dc.date.issued2020-12
dc.identifier.citationT. M. Martín-Guerrero, A. Santarelli, G. P. Gibiino, P. A. Traverso, C. Camacho-Peñalosa and F. Filicori, "Measurement-Based FET Analytical Modeling Using the Nonlinear Function Sampling Approach," in IEEE Microwave and Wireless Components Letters, vol. 30, no. 12, pp. 1145-1148, Dec. 2020, doi: 10.1109/LMWC.2020.3027989.es_ES
dc.identifier.urihttps://hdl.handle.net/10630/29693
dc.description.abstractA novel and fast method for the measurement-based identification of an analytical FET compact model from large- signal waveforms is presented. Based on a two-tone two-port experiment, a recently published Nonlinear Function Sampling (NFS) operator providing the samples of the FET state functions in the voltage domain is here exploited, for the first time, to extract an equivalent-circuit model. The approach is demonstrated on a 250-nm GaN-on-SiC HEMT at 2.5 and 5 GHz.es_ES
dc.language.isoenges_ES
dc.publisherIEEE Microwave and Wireless Components Letterses_ES
dc.rightsinfo:eu-repo/semantics/openAccesses_ES
dc.subjectTransistores de efecto de campoes_ES
dc.subject.otherField-effect transistors (FETs)es_ES
dc.subject.otherGallium nitride (GaN)es_ES
dc.subject.otherLarge-signal measurementses_ES
dc.subject.otherDevice modelinges_ES
dc.titleMeasurement-based FET analytical modeling using the nonlinear function sampling approaches_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.centroE.T.S.I. Telecomunicaciónes_ES
dc.identifier.doi10.1109/LMWC.2020.3027989
dc.type.hasVersioninfo:eu-repo/semantics/submittedVersiones_ES


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