This contribution aims at the experimental
confirmation of the advantages of the harmonic manipulation theory, using a low-frequency low-cost characterization setup. A 0.5-μm 10x100-μm (1-mm gate periphery) GaN HEMT has been
characterized synthesizing at the current-generator plane different load conditions, realizing tuned-load and Class-F operation. The measurements clearly demonstrate the importance of by synthesizing the required loads at the correct reference plane, giving an experimental proof of the performance predicted by theoretical analysis.
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